SiO2Nanopillars on Microscale Roughened Surface of GaN-Based Light-Emitting Diodes by SILAR-Based Method
نویسندگان
چکیده
منابع مشابه
10 GaN - based Light - Emitting Diodes
Light-emitting diodes (LEDs) offer several advantages over traditional light sources, such as smaller size, longer lifetime, higher efficiency, and greater mechanical ruggedness. Continuing developments in LED technology are producing devices with increased output power and efficiency as well as a wider range of colors [1]. Recent progress in the fabrication of GaN-based compound semiconductors...
متن کاملElectron leakage effects on GaN-based light-emitting diodes
Nitride-based light-emitting diodes suffer from a reduction (droop) of the internal quantum efficiency (IQE) with increasing injection current. Using advanced device simulation, we investigate the impact of electron leakage on the IQE droop for different properties of the electron blocker layer (EBL). The simulations show a strong influence of the EBL acceptor density on the droop. We also find...
متن کاملLight-Output Enhancement of GaN-Based Light-Emitting Diodes with Three-Dimensional Backside Reflectors Patterned by Microscale Cone Array
Three-dimensional (3D) backside reflector, compared with flat reflectors, can improve the probability of finding the escape cone for reflecting lights and thus enhance the light-extraction efficiency (LEE) for GaN-based light-emitting diode (LED) chips. A triangle-lattice of microscale SiO2 cone array followed by a 16-pair Ti3O5/SiO2 distributed Bragg reflector (16-DBR) was proposed to be attac...
متن کاملOrigin of efficiency droop in GaN-based light-emitting diodes
The efficiency droop in GaInN/GaN multiple-quantum well MQW light-emitting diodes is investigated. Measurements show that the efficiency droop, occurring under high injection conditions, is unrelated to junction temperature. Furthermore, the photoluminescence output as a function of excitation power shows no droop, indicating that the droop is not related to MQW efficiency but rather to the rec...
متن کاملEnhancement in Light Extraction Efficiency of GaN-Based Light-Emitting Diodes Using Double Dielectric Surface Passivation
SiO2/Al2O3 double dielectric stack layer was deposited on the surface of the GaN-based Light-Emitting Diode (LED). The double dielectric stack layer enhances both the electrical characteristics and the optical output power of the LED because the first Al2O3 layer plays a role of effectively passivating the p-GaN surface and the second lower index SiO2 layer increases the critical angle of the l...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Nanomaterials
سال: 2013
ISSN: 1687-4110,1687-4129
DOI: 10.1155/2013/753230